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Atomic layer deposited Al[sub 2]O[sub 3] for gate dielectric and passivation layer of single-walled carbon nanotube transistors

✍ Scribed by Kim, S. K.; Xuan, Y.; Ye, P. D.; Mohammadi, S.; Back, J. H.; Shim, Moonsub

Book ID: 121667787
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 615 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2724904

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