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Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure

โœ Scribed by Xiaorong Luo; Daping Fu; Lei Lei; Bo Zhang; Zhaoji Li; Shengdong Hu; Zhengyuan Zhang; Zhicheng Feng; Bin Yan


Book ID
114619680
Publisher
IEEE
Year
2009
Tongue
English
Weight
1006 KB
Volume
56
Category
Article
ISSN
0018-9383

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There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox