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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - A low on-resistance high voltage soi ligbt with oxide trench in drift region and hole bypass gate configuration

✍ Scribed by David Hongfei Lu, ; Jimbo, S.; Fujishima, N.

Book ID: 126757422
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 396 KB
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/IEDM.2005.1609356

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