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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Bandstructure and orientation effects in ballistic si and ge nanowire FETs

✍ Scribed by Jing Wang, ; Rahman, A.; Klimeck, G.; Lundstrom, M.

Book ID: 120617693
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 535 KB
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/IEDM.2005.1609399

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