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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Computational study of carbon nanotube p-i-n tunnel FETs

✍ Scribed by Koswatta, S.O.; Nikonov, D.E.; Lundstrom, M.S.

Book ID: 120607514
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 1003 KB
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/IEDM.2005.1609396

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