𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High speed toggle MRAM with mgO-based tunnel junctions

✍ Scribed by Slaughter, J.M.; Dave, R.W.; Durlam, M.; Kerszykowski, G.; Smith, K.; Nagel, K.; Feil, B.; Calder, J.; De Herrera, M.; Garni, B.; Tehrani, S.

Book ID: 118032675
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 322 KB
Volume: 0
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/iedm.2005.1609496

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High performance gate first HfSiON dielectric satisfying 45nm node requirements

✍ Quevedo-Lopez, M.A.; Krishnan, S.A.; Kirsch, P.D.; Li, H.J.; Sim, J.H.; Huffman, 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 630 KB

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

✍ Eng-Huat Toh, ; Grace Huiqi Wang, ; Guo-Qiang Lo, ; Balasubramanian, N.; Chih-Ha 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 829 KB

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique

✍ Oishi, A.; Fujii, O.; Yokoyama, T.; Ota, K.; Sanuki, T.; Inokuma, H.; Eda, K.; I 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 547 KB

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

✍ Hyunjun Sim, ; Hyejung Choi, ; Dongsoo Lee, ; Man Chang, ; Dooho Choi, ; Yunik S 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 747 KB

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

✍ Connelly, D.; Clifton, P.; Faulkner, C.; Grupp, D.E. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 403 KB

[IEEE IEEE InternationalElectron Devices

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

✍ Datta, S.; Ashley, T.; Brask, J.; Buckle, L.; Doczy, M.; Emeny, M.; Hayes, D.; H 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 518 KB