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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High performance gate first HfSiON dielectric satisfying 45nm node requirements

✍ Scribed by Quevedo-Lopez, M.A.; Krishnan, S.A.; Kirsch, P.D.; Li, H.J.; Sim, J.H.; Huffman, C.; Peterson, J.J.; Lee, B.H.; Pant, G.; Gnade, B.E.; Kim, M.J.; Wallace, R.M.; Guo, D.; Bu, H.; Ma, T.P.

Book ID: 118057566
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 630 KB
Volume: 0
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/iedm.2005.1609369

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