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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

✍ Scribed by Datta, S.; Ashley, T.; Brask, J.; Buckle, L.; Doczy, M.; Emeny, M.; Hayes, D.; Hilton, K.; Jefferies, R.; Martin, T.; Phillips, T.J.; Wallis, D.; Wilding, P.; Chau, R.

Book ID: 115522096
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 518 KB
Volume: 0
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/iedm.2005.1609466

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