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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique

✍ Scribed by Oishi, A.; Fujii, O.; Yokoyama, T.; Ota, K.; Sanuki, T.; Inokuma, H.; Eda, K.; Idaka, T.; Miyajima, H.; Iwasa, S.; Yamasaki, H.; Oouchi, K.; Matsuo, K.; Nagano, H.; Komoda, T.; Okayama, Y.; Matsumoto, T.; Fukasaku, K.; Shimizu, T.; Miyano, K.; Suzuki, T.; Yahashi, K.; Horiuchi, A.; Takegawa, Y.; Saki, K.; Mori, S.; Ohno, K.; Mizushima, I.; Saito, M.; Iwai, M.; Yamada, S.; Nagashima, N.; Matsuoka, F.

Book ID: 111876365
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 547 KB
Volume: 0
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/iedm.2005.1609314

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