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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

✍ Scribed by Eng-Huat Toh, ; Grace Huiqi Wang, ; Guo-Qiang Lo, ; Balasubramanian, N.; Chih-Hang Tung, ; Benistant, F.; Lap Chan, ; Samudra, G.; Yee-Chia Yeo,

Book ID: 118208573
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 829 KB
Volume: 0
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/iedm.2005.1609518

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