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[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - A novel structure of high voltage SOI device with Composite Dielectric buried layer

✍ Scribed by Fan, Jie; Luo, Xiaorong; Zhang, Bo; Li, Zhaoji

Book ID: 120622409
Publisher: IEEE
Year: 2011
Weight: 117 KB
Category: Article
ISBN: 1457719967
DOI: 10.1109/EDSSC.2011.6117719

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