✦ LIBER ✦
A back-gate bias effect model considering the charge accumulation behavior above the field oxide for ultra-thin SOI NMOS devices
✍ Scribed by J.H. Sim; J.B. Kuo
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 410 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0038-1101
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