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Modeling the effect of back gate bias on the subthreshold behavior of a SiGe-channel SOI PMOS device

✍ Scribed by J.B. Kuo; M.C. Tang; J.H. Sim


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
347 KB
Volume
36
Category
Article
ISSN
0038-1101

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