Short-channel effect on the threshold voltage of accumulation-type, inversion-type and intrinsic-type SOI PMOS devices

✍ Scribed by J.B Kuo; K.W Su; Y.G Chen; S.S Chen

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 277 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(95)00078-8