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Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1−xGex/Si(1 0 0) heterostructure

✍ Scribed by Takahiro Seo; Masao Sakuraba; Junichi Murota

Book ID: 108060529
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 292 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.153

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Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x&#xa0;>&#xa0;0.4) Si/strained Si1−xGex/Si(1&#xa0;0&#xa0;0) heterostructure

Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1−xGex/Si(1 0 0) heterostructure