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Strain relaxation of pseudomorphic Si1−xGex/Si(1 0 0) heterostructures by Si+ ion implantation

✍ Scribed by B. Holländer; D. Buca; St. Lenk; S. Mantl; H.-J. Herzog; Th. Hackbarth; R. Loo; M. Caymax; M.J. Mörschbächer; P.F.P. Fichtner

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
184 KB
Volume
242
Category
Article
ISSN
0168-583X

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