Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 − xGex/Si(100) heterostructure

✍ Scribed by Takahiro Seo; Masao Sakuraba; Junichi Murota

• Book ID: 108290168
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 335 KB
• Volume: 517
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2008.08.037