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Effect of water absorption on the residual stress in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

✍ Scribed by Kim, S. P.; Choi, S. K.; Park, Youngsoo; Chung, Ilsub

Book ID: 121803826
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 267 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1383278

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