Effects of process parameters on the structure of hydrogenated amorphous carbon films processed by electron cyclotron resonance plasma enhanced chemical vapor deposition

✍ Scribed by Dong Xie; Hengjun Liu; Xingrui Deng; Y.X. Leng; Nan Huang

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 450 KB
• Volume: 204
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2010.02.012

✦ Synopsis

The paper presents the investigation of the effect of the process parameters on the structure of hydrogenated amorphous carbon (a-C:H) films deposited on Si(100) substrate by electron cyclotron resonance microwave plasma chemical vapor deposition method (ECR-PCVD). The investigation is based on an orthogonal experimental design and analysis method. Both the carbon sp 3 /sp 2 bonding ratio and hydrogen content are evaluated from the visible Raman spectra deconvolution. The statistical results indicate that the sp 3 /sp 2 bonding ratio is mainly affected by microwave power, and it decreases as the microwave power increases. The hydrogen content in a-C:H films is mainly affected by the substrate bias voltage, and it decreases with increasing the bias voltage. The effect of other parameters on the structure of a-C:H films is relatively not significant, but is also discussed in the paper.