Effect of the Surface Condition on the Internal Stress of a-Si: H, a-SiNX: H, and a-Si: H/a-SiNX: H Heterojunction Films
โ Scribed by Wang, Wanlu ;Liao, Kejun
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 174 KB
- Volume
- 119
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Surface Rayleigh acoustic waves and related elastic properties of quasiperiodic and periodic modulated a- \(\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{SiN}_{x}: \mathrm{H}\) superlattices have been studied by means of a light-scattering technique. Changes in the phase velocity of the surface Rayle
Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN x :H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the depositio
The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a