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Experimental Studies of Light-Induced Stress in a-Si:H/a-SiNX: H Multilayer Films

โœ Scribed by Wang, Wanlu


Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
229 KB
Volume
121
Category
Article
ISSN
0031-8965

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Induced defects in a-Si:H/a-SiNx:H multi
โœ W.Z. Gu; Z.C. Wang; M.X. Sun ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 125 KB

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a