Influence of internal stress on optical gap of a-Si:H / a-SiNx:H multilayer films
โ Scribed by Wang Wanlu; Liao Kejun
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 253 KB
- Volume
- 72
- Category
- Article
- ISSN
- 0038-1098
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๐ SIMILAR VOLUMES
The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a
By using wavelength modulated absorption (WMA), optical transitions between subbands are revealed in \(\mathrm{a}-\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{SiN}_{\mathrm{x}}: \mathrm{H}\) superlattices for the well-layer thicknesses less than \(50 \AA\). The threshold energies of the distinct ste