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Influence of internal stress on optical gap of a-Si:H / a-SiNx:H multilayer films

โœ Scribed by Wang Wanlu; Liao Kejun


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
253 KB
Volume
72
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES


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The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a

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By using wavelength modulated absorption (WMA), optical transitions between subbands are revealed in \(\mathrm{a}-\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{SiN}_{\mathrm{x}}: \mathrm{H}\) superlattices for the well-layer thicknesses less than \(50 \AA\). The threshold energies of the distinct ste