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Induced defects in a-Si:H/a-SiNx:H multilayers by use of EMT and PAT

✍ Scribed by W.Z. Gu; Z.C. Wang; M.X. Sun

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
125 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects are found only in the interface region away from the substrate.

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