Incorporation scheme of H reducing defects in a-Si studied by NMR and ESR
β Scribed by Tatsuo Shimizu; Kenji Nakazawa; Minoru Kumeda; Shoichi Ueda
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 193 KB
- Volume
- 117-118
- Category
- Article
- ISSN
- 0378-4363
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.
The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a
## Abstract ^29^Siο£Ώ^1^H coupling constants across two and three bonds in silatranes and model triethoxysilanes were measured from ^1^H spectra by multiple quantum NMR. There was an increase in the ^29^Siο£ΏOο£ΏCο£ΏH coupling in the equatorial position and a decrease in that in the axial position of the s