Band offset, persistent photoconductivity and temperature dependence of conductivity in μc-Si : H/a-Si : H multilayers

✍ Scribed by Lianghuan Feng; Jun Liu; Xinmin Zhou; Yaping Cai

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 161 KB
• Volume: 13
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1993.1017

✦ Synopsis

(\mu \mathrm{c}-\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{Si}: \mathrm{H}) multilayers have been fabricated with an rf glow-discharge method in which two coupling types of (\mathrm{if}) electrodes were used independently by turns without altering the composition of the reactive gases. This specific design is regarded as a kind of microstructure-modulated superlattice. The valence band offset at the (\mu \mathrm{c}-) (\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{Si}: \mathrm{H}) interface is determined by X-ray photoelectron spectroscopy (XPS). The temperature dependence of the longitudinal dark conductivity in (\mu \mathrm{c}-\mathrm{Si}: \mathrm{H} / \mathrm{a}-\mathrm{Si}) : (\mathrm{H}) superlattices has been studied and a resonant tunneling effect observed. Large Persistent photoconductivity (PPC) was detected and its time dependence obtained. Finally, the above experimental results are discussed.