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Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

✍ Scribed by Andrzej Taube; Robert Mroczyński; Katarzyna Korwin-Mikke; Sylwia Gierałtowska; Jan Szmidt; Anna Piotrowska

No coin nor oath required. For personal study only.

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