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The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
✍ Scribed by Wu, Y.; Lucovsky, G.; Lee, Y.-M.
- Book ID
- 114538204
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 177 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9383
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