Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

✍ Scribed by Youhei Sugimoto; Hideto Adachi; Keisuke Yamamoto; Dong Wang; Hideharu Nakashima; Hiroshi Nakashima

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 262 KB
• Volume: 9
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2006.10.020