Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack

✍ Scribed by S.V. Jagadeesh Chandra; Jin-Sung Kim; Kyung-Won Moon; Chel-Jong Choi

• Book ID: 113797766
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 541 KB
• Volume: 89
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.156