✦ LIBER ✦

The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode

✍ Scribed by Changhwan Choi; Rino Choi

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Charge trapping and dielectric reliabili

✍ Kerber, A.; Cartier, E.; Degraeve, R.; Roussel, P.J.; Pantisano, L.; Kauerauf, T 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 695 KB

Effect of the post-deposition annealing

✍ Andrzej Taube; Robert Mroczyński; Katarzyna Korwin-Mikke; Sylwia Gierałtowska; J 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 696 KB

Effect of post metallization annealing o

✍ S.V. Jagadeesh Chandra; Jin-Sung Kim; Kyung-Won Moon; Chel-Jong Choi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 541 KB

Electrical properties of metal–HfO2–sili

✍ Fu-Chien Chiu; Shun-An Lin; Joseph Ya-min Lee 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 245 KB

Improving the electrical characteristics

✍ B.L. Yang; H. Wong; K. Kakushima; H. Iwai 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 545 KB

The Influence of TiN Thickness and Forma

✍ Vellianitis, G.; van Dal, M.J.H.; Boccardi, G.; Duriez, B.; Voogt, F.C.; Kaiser, 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 412 KB