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Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes

✍ Scribed by Kerber, A.; Cartier, E.; Degraeve, R.; Roussel, P.J.; Pantisano, L.; Kauerauf, T.; Groeseneken, G.; Maes, H.E.; Schwalke, U.

Book ID: 114617136
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 695 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.813486

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