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Improvement of charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films by thermal annealing

✍ Scribed by Nakata, Shunji; Kato, Takashi; Ozaki, Shinya; Kawae, Takeshi; Morimoto, Akiharu


Book ID
122576635
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
462 KB
Volume
542
Category
Article
ISSN
0040-6090

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In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of