𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputtering

✍ Scribed by Shunji Nakata; Ryoji Maeda; Takeshi Kawae; Akiharu Morimoto; Tatsuo Shimizu

Book ID
113937196
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
579 KB
Volume
520
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Profiling of traps in SiO2/Al2O3 gate st
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
✍ Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Rous πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 132 KB

In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of