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Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thickness

✍ Scribed by Sanjeev K. Gupta; A. Azam; J. Akhtar


Book ID
114992393
Publisher
Springer
Year
2012
Tongue
English
Weight
299 KB
Volume
46
Category
Article
ISSN
1063-7826

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ZrO 2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering ( $ 25 nm thick) and thermal oxidation (15 min at 500 1C) processes. Effects of post-oxidation annealing temperature (600-900 1C) on the physical and electrical properties of the thin film have been in