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Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics

✍ Scribed by R. Palmieri; H. Boudinov; C. Radtke; E.F. da Silva Jr.

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 342 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.07.014

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