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Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions

✍ Scribed by Zs.J. Horváth; G. Molnár; B. Kovács; G. Petö; M. Andrási; B. Szentpáli


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
463 KB
Volume
126
Category
Article
ISSN
0022-0248

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Effect of Defect Bands on the Electrical
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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb