Electrical characterization of Al-SiO2-Si (N-type) tunnel structures. Influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface

✍ Scribed by G. Pananakakis; G. Kamarinos; M. El-Sayed; V. Le Goascoz

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 786 KB
• Volume: 26
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(83)90097-7