Electrical characterization of Al-SiO2-Si (N-type) tunnel structures, influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface: G. Pananakakis, G. Kamarinos and M. El-sayed. Solid-St. Electron.26 (5), 415 (1983)

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 123 KB
• Volume: 24
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(84)90788-1