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Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

✍ Scribed by J.A. Ng; Y. Kuroki; N. Sugii; K. Kakushima; S.-I. Ohmi; K. Tsutsui; T. Hattori; H. Iwai; H. Wong

No coin nor oath required. For personal study only.

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