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Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3dielectric films on Si

✍ Scribed by V. Edon; M.C. Hugon; B. Agius; L. Miotti; C. Radtke; F. Tatsch; J.J. Ganem; I. Trimaille; I.J.R. Baumvol


Publisher
Springer
Year
2006
Tongue
English
Weight
466 KB
Volume
83
Category
Article
ISSN
1432-0630

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## Dielectric constant Leakage current density La-doped BaTiO 3 thin films with 200 nm thickness were fabricated by r.f. magnetron sputtering system onto Pt/Ti/SiO 2 /Si substrates. The effects of post-annealing and the amount of dopant on microstructure and electrical properties were studied. The