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Interfacial structure and electrical properties of LaAlO3gate dielectric films on Si by metalorganic chemical vapor deposition

✍ Scribed by Q.-Y. Shao; A.-D. Li; J.-B. Cheng; H.-Q. Ling; D. Wu; Z.-G. Liu; N.-B. Ming; C. Wang; H.-W. Zhou; B.-Y. Nguyen

No coin nor oath required. For personal study only.

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