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Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

✍ Scribed by T. Soga; T. Suzuki; M. Mori; Z.K. Jiang; T. Jimbo; M. Umeno


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
413 KB
Volume
132
Category
Article
ISSN
0022-0248

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Microstructures of AlGaN/AlN/Si (111) Gr
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In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and