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Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic

โœ Scribed by S Whelan; V Privitera; G Mannino; M Italia; C Bongiorno; E Napolitani; E.J.H Collart; J.A van den Berg


Book ID
114165163
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
108 KB
Volume
186
Category
Article
ISSN
0168-583X

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The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i