The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i
β¦ LIBER β¦
Evolution of mechanical strain and extended defects in annealed (1 0 0) silicon samples implanted with Ge+ ions
β Scribed by Yu. Suprun-Belevich; F. Cristiano; A. Nejim; P.L.F. Hemment; B.J. Sealy
- Book ID
- 114169847
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 185 KB
- Volume
- 140
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Annealing of radiation damage in (1 
β
I.O. Usov; P.N. Arendt; J.R. Groves; L. Stan; R.F. DePaula
π
Article
π
2006
π
Elsevier Science
π
English
β 279 KB
A comparison of extended defect formatio
β
J Wong-Leung; M.K Linnarsson; B.G Svensson
π
Article
π
2003
π
Elsevier Science
π
English
β 277 KB
A hot implantation study on the evolutio
β
A.V. Fedorov; M.A. van Huis; A. van Veen
π
Article
π
2002
π
Elsevier Science
π
English
β 95 KB
Depth profiling of high energy nitrogen
β
M. EriΔ; S. PetroviΔ; M. Kokkoris; A. Lagoyannis; V. Paneta; S. Harissopulos; I.
π
Article
π
2012
π
Elsevier Science
π
English
β 592 KB
Formation of bubbles and extended defect
β
Douglas L. da Silva; Marcio J. MΓΆrschbΓ€cher; Paulo F.P. Fichtner; Erwan Oliviero
π
Article
π
2004
π
Elsevier Science
π
English
β 316 KB
Influence of post-annealing time on blis
β
J.H. Liang; C.Y. Bai; D.S. Chao; C.M. Lin
π
Article
π
2008
π
Elsevier Science
π
English
β 249 KB
The influence of post-annealing time on blistering characteristics induced by 5 Γ 10 16 cm Γ2 ion-implanted H in Si <1 0 0> was studied in terms of the formation and growth of blisters. Ion energies consisted of 40 and 100 keV. Post-annealing treatments were carried out using furnace annealing (FA)