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Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals

✍ Scribed by M. Erić; S. Petrović; M. Kokkoris; A. Lagoyannis; V. Paneta; S. Harissopulos; I. Telečki

Book ID
113823795
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
592 KB
Volume
274
Category
Article
ISSN
0168-583X

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