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2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

✍ Scribed by Y. Li; C. Tan; Y. Xia; J. Zhang; C. Xue; H. Xu; P. Liu

Publisher: Springer
Year: 2000
Tongue: English
Weight: 112 KB
Volume: 71
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390000532

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