Diffusion profiles of low dosages chromium ions implanted into (1 0 0) crystalline silicon
β Scribed by F. Salman; P. Zhang; L. Chow; F.A. Stevie
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 208 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i
The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 Γ0) is investigated in the annealing temperature range from 660 to 720 Β°C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 Γ0)