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Implant temperature dependence of transient-enhanced diffusion in silicon (1 0 0) implanted with low-energy arsenic ions

✍ Scribed by S Whelan; D.G Armour; J.A Van den Berg; R.D Goldberg; S Zhang; P Bailey; T.C.Q Noakes

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
201 KB
Volume
3
Category
Article
ISSN
1369-8001

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