Determination of deep-level parameters by isothermal deep-level transient spectroscopy with optical excitation
✍ Scribed by Stuchlíková, Ľ. ;Harmatha, L. ;Nágl, V. ;Gaži, M.
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 397 KB
- Volume
- 138
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot
This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce