Study of deep levels in Schottky/CuInSe2single-crystal devices by deep-level transient spectroscopy measurements

✍ Scribed by A. M. Bakry; A. M. Elnaggar

• Publisher: Springer US
• Year: 1996
• Tongue: English
• Weight: 152 KB
• Volume: 7
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00133114

✦ Synopsis

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schottky diodes lies in the elimination of the window n-type layer diffusion into CulnSe2 material to reveal the intrinsic properties of the semiconductor. A comparison between previously reported defect states in Cd(Zn)S-CulnSe2 and those found in Schottky/CulnSe2 is made.

The defect concentration is calculated as well as the capture cross-section. Some of the defect levels agree with previously published data. A common feature exhibited in all the measured samples is that the capacitance transient is non-exponential, and the DLTS spectrum is relatively broad, due to the contribution of two or more closely spaced levels.